power transistors 358 2SD2341 silicon npn triple diffusion planar type for power amplification features ? low collector to emitter saturation voltage v ce(sat) ? high collector to emitter voltage v ceo ? allowing automatic insertion possible with radial taping absolute maximum ratings t c = 25 c 1: emitter 2: collector 3: base mt-3-a1 package unit: mm parameter symbol rating unit collector to base voltage v cbo 200 v collector to emitter voltage v ceo 180 v emitter to base voltage v ebo 6v peak collector current i cp 3a collector current i c 2a collector power dissipation p c 1.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c electrical characteristics t c = 25 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 200 v, i e = 0 50 a emitter cutoff current i ebo v eb = 4 v, i c = 0 50 a collector to base voltage v cbo i c = 500 a, i e = 0 200 v collector to emitter voltage v ceo i c = 5 ma, i b = 0 180 v emitter to base voltage v ebo i e = 500 a, i c = 0 6 v forward current transfer ratio h fe1 * v ce = 10 v, i c = 150 ma 60 240 h fe2 v ce = 10 v, i c = 400 ma 50 base to emitter voltage v be v ce = 10 v, i c = 400 ma 1 v collector to emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 1 v transition frequency f t v cb = 10 v, i c = ? 100 ma, f = 200 mhz 150 mhz 7.5 0.2 0.65 0.1 0.7 0.1 1.15 0.2 2.5 0.2 2.5 0.2 0.85 0.1 1.0 0.1 0.7 0.1 1.15 0.2 0.5 0.1 1 0.8 c 23 0.4 0.1 4.5 0.2 0.8 c 0.8 c 3.8 0.2 16.0 1.0 10.8 0.2 2.05 0.2 90 ? 2.5 0.1 note) * : rank classification rank r s h fe1 60 to 140 100 to 240 maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
power transistors 359 2SD2341 v ce(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce i c ? v be area of safe operation (aso) r th(t) ? t 0 160 40 120 80 140 20 100 60 0 0.4 0.8 1.2 1.6 2.0 without heat sink ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 024 420 816 12 0 1.2 1.0 0.8 0.6 0.4 0.2 i b =7ma 6ma 5ma 4ma 3ma 2ma 1ma t c =25 ? c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 1.2 1.0 0.8 0.6 0.4 0.2 01.2 0.2 1.0 0.4 0.8 0.6 t c =100 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.03 0.1 0.3 1 0.01 10 1 0.1 0.03 0.3 3 i c /i b =10 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 0.03 0.3 3 10 1 3 10 30 100 300 1000 3000 10000 v ce =10v 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 300 1000 0 240 200 160 120 80 40 v cb =10v f=200mhz t c =25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1000 i cp i c t=1s t=1ms t=5ms non repetitive pulse t c =25 ? c collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 1 1 10 10 2 10 4 10 3 10 4 10 4 10 3 10 2 10 1 10 1 10 2 10 3 without heat sink time t ( s ) thermal resistance r th (t) ( ? c/w ) maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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